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使用多孔硅热隔离的热电发电机。

A thermoelectric generator using porous Si thermal isolation.

机构信息

NCSR Demokritos/IMEL, Terma Patriarchou Gregoriou, Aghia Paraskevi, Athens 15310, Greece.

出版信息

Sensors (Basel). 2013 Oct 10;13(10):13596-608. doi: 10.3390/s131013596.

DOI:10.3390/s131013596
PMID:24152923
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3859081/
Abstract

In this paper we report on a thermoelectric generator (TEG) using thermal isolation provided by a thick porous Si layer locally formed on the Si wafer and thermocouples composed of p-doped polycrystalline Si/Al. The "hot" contacts of the thermocouples lie on the porous Si layer, while the "cold" contacts lie on bulk crystalline Si. A housing was also designed and fabricated in order to transfer any external temperature change on the "hot" contacts of the thermocouples, the "cold" contacts being isolated from the "hot" contacts by a thick resist layer. The fabrication of the sensing element (Si die) is fully compatible with batch Si processing. The output power of the thermoelectric generator depends on the porous Si isolation layer thickness, porosity, structure and morphology. For a mesoporous Si layer of 60% porosity and a macroscopic temperature differential of 10 K, an output power of 0.39 μW/cm2 was measured for a 50 μm thick porous Si layer.

摘要

本文报道了一种基于厚多孔硅层的热隔离的热电发电机(TEG),该厚多孔硅层局部形成于硅片上,热电偶由 p 型掺杂多晶硅/铝组成。热电偶的“热”接触位于多孔硅层上,而“冷”接触位于体硅上。为了将热电偶的“热”接触上的任何外部温度变化传递出去,还设计并制造了一个外壳,而“冷”接触则通过厚电阻层与“热”接触隔离。传感元件(硅片)的制造完全与批处理硅工艺兼容。热电发电机的输出功率取决于多孔硅隔离层的厚度、孔隙率、结构和形态。对于 60%孔隙率的中孔硅层和 10 K 的宏观温度差,对于 50 μm 厚的多孔硅层,测量到 0.39 μW/cm2 的输出功率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/7b52c4e8a810/sensors-13-13596f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/e12439afc3c8/sensors-13-13596f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/7b1affb17182/sensors-13-13596f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/582dbc9fd306/sensors-13-13596f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/88c1fc097692/sensors-13-13596f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/9c286a9e6ae0/sensors-13-13596f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/7b52c4e8a810/sensors-13-13596f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/e12439afc3c8/sensors-13-13596f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/7b1affb17182/sensors-13-13596f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/582dbc9fd306/sensors-13-13596f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/88c1fc097692/sensors-13-13596f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/9c286a9e6ae0/sensors-13-13596f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1443/3859081/7b52c4e8a810/sensors-13-13596f6.jpg

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本文引用的文献

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Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si.高掺硼纳米晶硅中电导率和塞贝克系数的同时增加。
Nanotechnology. 2013 May 24;24(20):205402. doi: 10.1088/0957-4484/24/20/205402. Epub 2013 Apr 19.
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Sensors (Basel). 2012 Nov 2;12(11):14838-50. doi: 10.3390/s121114838.
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