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具有全有机一二极管一电阻器结构的灵活可扭曲非易失性存储单元阵列。

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

机构信息

1] Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 565-905, Korea [2] School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.

出版信息

Nat Commun. 2013;4:2707. doi: 10.1038/ncomms3707.

Abstract

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

摘要

柔性有机存储器件是未来柔性有机电子产品不可或缺的组成部分之一。然而,由于制造困难以及迄今为止性能相对较差,尚未在可变形衬底上展示高密度的全有机存储单元阵列而不产生串扰。在这里,我们展示了第一个具有二极管-电阻器结构的柔性全有机 64 位存储单元阵列。我们的全有机二极管-电阻器单元具有出色的可重写开关特性,即使在苛刻的物理应力期间和之后也是如此。单元的写入-读取-擦除-读取输出序列与外部脉冲信号完全对应,无论衬底变形如何。根据标准 ASCII 字符代码,二极管-电阻器单元阵列可以在指定的单元和编码字母上进行清晰寻址。我们对集成有机存储单元阵列的研究表明,全有机二极管-电阻器单元结构适用于未来高密度柔性有机存储应用。

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