Sun Linfeng, Zhang Yishu, Han Gyeongtak, Hwang Geunwoo, Jiang Jinbao, Joo Bomin, Watanabe Kenji, Taniguchi Takashi, Kim Young-Min, Yu Woo Jong, Kong Bai-Sun, Zhao Rong, Yang Heejun
Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.
Singapore University of Technology & Design, 8 Somapah Road, 487372, Singapore, Singapore.
Nat Commun. 2019 Jul 18;10(1):3161. doi: 10.1038/s41467-019-11187-9.
The large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing a memory cell with negligible sneak currents remains a fundamental issue in the crossbar array architecture, up-to-date memory cells for large-scale crossbar arrays suffer from process and device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we introduce a self-selective memory cell based on hexagonal boron nitride and graphene in a vertical heterostructure. Combining non-volatile and volatile memory operations in the two hexagonal boron nitride layers, we demonstrate a self-selectivity of 10 with an on/off resistance ratio larger than 10. The graphene layer efficiently blocks the diffusion of volatile silver filaments to integrate the volatile and non-volatile kinetics in a novel way. Our self-selective memory minimizes sneak currents on large-scale memory operation, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration.
大规模交叉开关阵列是一种很有前景的架构，适用于硬件友好型的节能三维存储器和神经形态计算系统。虽然在交叉开关阵列架构中，以可忽略的潜电流访问存储单元仍然是一个基本问题，但用于大规模交叉开关阵列的最新存储单元存在工艺和器件集成问题（一个选择器一个电阻器）或破坏性读取操作（互补电阻开关）。在此，我们介绍一种基于垂直异质结构中的六方氮化硼和石墨烯的自选择存储单元。通过在两个六方氮化硼层中结合非易失性和易失性存储操作，我们展示了10的自选择性，开/关电阻比大于10。石墨烯层有效地阻止了挥发性银细丝的扩散，以一种新颖的方式整合了挥发性和非挥发性动力学。我们的自选择存储器在大规模存储操作中最大限度地减少了潜电流，从而为太比特级和节能存储器集成实现了实际的读出裕度。
