Organic Electronics, Department of Science and Technology, Linköping University , SE-601 74, Norrköping, Sweden.
ACS Appl Mater Interfaces. 2014 Jan 8;6(1):438-42. doi: 10.1021/am404494h. Epub 2013 Nov 22.
The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.
铁电聚合物薄膜所表达的密集表面电荷会在聚电解质层内引起离子位移，反之亦然。这是因为铁电薄膜表面的偶极子密度及其极化切换时间与在铁电体/聚电解质和聚电解质/半导体界面形成的（亥姆霍兹）电双层的密度和极化切换时间相匹配。这种材料组合允许在双电层电容器的电容中引入滞后效应。后者被有利地用于控制有机场效应晶体管的半导体沟道中的电荷积累。由此产生的存储晶体管可以在约 7 V 的栅极电压下写入，并在低至 50 mV 的漏极电压下读取。这种写入和读出电压之间的巨大差异的技术意义在于这种铁电存储器的非破坏性读取。
