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体式负温度系数热敏陶瓷中的单极忆阻开关。

Unipolar memristive switching in bulk negative temperature coefficient thermosensitive ceramics.

机构信息

State key laboratory of new ceramic and fine processing, School of materials science and engineering, Tsinghua University, Beijing, China.

出版信息

PLoS One. 2013 Nov 8;8(11):e79832. doi: 10.1371/journal.pone.0079832. eCollection 2013.

DOI:10.1371/journal.pone.0079832
PMID:24255717
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3821860/
Abstract

A memristive phenomenon was observed in macroscopic bulk negative temperature coefficient nickel monoxide (NiO) ceramic material. Current-voltage characteristics of memristors, pinched hysteretic loops were systematically observed in the Ag/NiO/Ag cell. A thermistor-based model for materials with negative temperature coefficient was proposed to explain the mechanism of the experimental phenomena. Most importantly, the results demonstrate the potential for a realization of memristive systems based on macroscopic bulk materials.

摘要

在宏观块状负温度系数镍 monoxide（NiO）陶瓷材料中观察到了一种忆阻现象。在 Ag/NiO/Ag 电池中系统地观察到了忆阻器的电流-电压特性，出现了夹断滞后回线。提出了一个基于负温度系数材料的热敏电阻模型，以解释实验现象的机制。最重要的是，这些结果表明基于宏观块状材料实现忆阻系统的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/b9b831738dda/pone.0079832.g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/fee3ee2a61c0/pone.0079832.g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/bf800b213071/pone.0079832.g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/b0efbf4545aa/pone.0079832.g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/389f07947bac/pone.0079832.g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/b9b831738dda/pone.0079832.g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/fee3ee2a61c0/pone.0079832.g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/bf800b213071/pone.0079832.g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/b0efbf4545aa/pone.0079832.g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/389f07947bac/pone.0079832.g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c3ba/3821860/b9b831738dda/pone.0079832.g005.jpg

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本文引用的文献

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Non-Hebbian learning implementation in light-controlled resistive memory devices.光控电阻式存储器件中的非赫布学习实现。
PLoS One. 2012;7(12):e52042. doi: 10.1371/journal.pone.0052042. Epub 2012 Dec 14.
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