Rout Chandra Sekhar, Joshi Padmashree D, Kashid Ranjit V, Joag Dilip S, More Mahendra A, Simbeck Adam J, Washington Morris, Nayak Saroj K, Late Dattatray J
School of Basic Sciences, Indian Institute of Technology, Bhubaneswar 751013, India.
Sci Rep. 2013 Nov 21;3:3282. doi: 10.1038/srep03282.
We report here the field emission studies of a layered WS2-RGO composite at the base pressure of ~1 × 10(-8) mbar. The turn on field required to draw a field emission current density of 1 μA/cm(2) is found to be 3.5, 2.3 and 2 V/μm for WS2, RGO and the WS2-RGO composite respectively. The enhanced field emission behavior observed for the WS2-RGO nanocomposite is attributed to a high field enhancement factor of 2978, which is associated with the surface protrusions of the single-to-few layer thick sheets of the nanocomposite. The highest current density of ~800 μA/cm(2) is drawn at an applied field of 4.1 V/μm from a few layers of the WS2-RGO nanocomposite. Furthermore, first-principles density functional calculations suggest that the enhanced field emission may also be due to an overalp of the electronic structures of WS2 and RGO, where graphene-like states are dumped in the region of the WS2 fundamental gap.
我们在此报告了在约1×10⁻⁸毫巴的本底压力下对层状WS₂-RGO复合材料的场发射研究。发现对于WS₂、RGO和WS₂-RGO复合材料,要引出1 μA/cm²的场发射电流密度所需的开启场分别为3.5、2.3和2 V/μm。WS₂-RGO纳米复合材料观察到的增强场发射行为归因于2978的高场增强因子,这与纳米复合材料单层至几层厚薄片的表面突起有关。从几层WS₂-RGO纳米复合材料在4.1 V/μm的外加场下引出了高达约800 μA/cm²的电流密度。此外,第一性原理密度泛函计算表明,增强的场发射也可能是由于WS₂和RGO的电子结构重叠,其中类石墨烯态被注入到WS₂本征能隙区域。