Opt Lett. 2013 Nov 15;38(22):4868-71. doi: 10.1364/OL.38.004868.
InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 μm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 μm at a bias current of 80 mA at 25 °C.
首次提出了一种工作在 1.06μm 波长、采用波导型 PiNiN 结构的 GaAs/InGaAs 多量子阱（MQW）耗尽型光控晶闸管激光器。光控晶闸管激光器表现出明显的非线性 S 型电流-电压和激光特性。所测的开关电压和电流分别为 5V 和 1mA。保持电压和电流分别为 2.6V 和 3.6mA。在室温下，每个面可获得 30mW 的较高光输出功率。在 25°C 时，偏置电流为 80mA 时，激光波长为 1.055μm。
