Luo S, Ji H M, Gao F, Xu F, Yang X G, Liang P, Yang T
Opt Express. 2015 Apr 6;23(7):8383-8. doi: 10.1364/OE.23.008383.
We demonstrate high performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers grown by metalorganic vapor phase epitaxy. The laser structure consists of two InAs/InGaAs QWs, with a 30 μm-wide ridge waveguide and two cleaved cavity facets. The continuous wave operation at room temperature (RT) is achieved, with an output power of larger than 160 mW per facet and with a low threshold current density of 90.4 A/cm(2) per QW derived for the infinite cavity length. Under pulse injection mode, the maximal peak power per facet is as high as 1.35 W. By varying the cavity length, the lasing wavelength can be tuned in a range from 2142 nm to 2154 nm. Moreover, the highest operating temperature reaches up to 100 °C, and characteristic temperatures are 50 K (T(0)) and 132 K (T(1)) in the temperature range of 20-70 °C, respectively.
我们展示了通过金属有机气相外延生长的高性能2150纳米铟砷/铟镓砷/磷化铟量子阱（QW）激光器。该激光器结构由两个铟砷/铟镓砷量子阱、一个30微米宽的脊形波导和两个解理腔面组成。实现了室温（RT）下的连续波运转，每个腔面的输出功率大于160毫瓦，对于无限腔长，每个量子阱的阈值电流密度低至90.4安/平方厘米。在脉冲注入模式下，每个腔面的最大峰值功率高达1.35瓦。通过改变腔长，激光波长可在2142纳米至2154纳米范围内调谐。此外，最高工作温度可达100℃，在20至70℃的温度范围内，特征温度分别为50K（T(0)）和132K（T(1)）。
