在硅衬底上单片生长的1.3微米砷化铟/砷化镓量子点激光器。

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

作者信息

Wang Ting, Liu Huiyun, Lee Andrew, Pozzi Francesca, Seeds Alwyn

机构信息

Department of Electronic and Electrical Engineering, University College London, London, UK.

出版信息

Opt Express. 2011 Jun 6;19(12):11381-6. doi: 10.1364/OE.19.011381.

DOI:10.1364/OE.19.011381

PMID:21716368

Abstract

We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature. These results are directly attributable to the optimized growth temperature of the initial GaAs nucleation layer.

摘要

我们报道了首次在硅（100）衬底上外延生长的电泵浦1.3微米砷化铟/砷化镓量子点激光器的运行情况。该激光器结构通过分子束外延直接生长在硅衬底上。对于在室温下具有解理面的大面积激光器，已证明其在1.302微米处激射，阈值电流密度为725安/平方厘米，输出功率约为26毫瓦。这些结果直接归因于初始砷化镓成核层的优化生长温度。