Opt Lett. 2013 Dec 15;38(24):5353-6. doi: 10.1364/OL.38.005353.
Heterogeneous III-V/Si integration with a compact optical vertical interconnect access is fabricated and the light coupling efficiency between the III-V/Si waveguide and the silicon nanophotonic waveguide is characterized. The III-V semiconductor material is directly bonded to the silicon-on-insulator (SOI) substrate and etched to form the III-V/Si waveguide for a higher light confinement in the active region. The compact optical vertical interconnect access is formed through tapering a III-V and an SOI layer in the same direction. The measured III-V/Si waveguide has a light coupling efficiency above ~90% to the silicon photonic layer with the tapering structure. This heterogeneous and light coupling structure can provide an efficient platform for photonic systems on chip, including passive and active devices.
采用紧凑的光学垂直互连接入方式实现了 III-V/Si 异质集成，并对 III-V/Si 波导与硅纳米光子波导之间的光耦合效率进行了表征。III-V 半导体材料直接键合到绝缘体上硅（SOI）衬底上，并进行刻蚀以形成 III-V/Si 波导，从而在有源区实现更高的光限制。紧凑的光学垂直互连接入是通过沿相同方向逐渐变细 III-V 和 SOI 层形成的。具有渐变结构的测量 III-V/Si 波导与硅光子层之间的光耦合效率超过约 90%。这种异质和光耦合结构可为片上光子系统提供一个高效平台，包括无源和有源器件。
