Institute of Microelectronics, Department of Electrical Engineering Center for Micro/Nano Science and Technology Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
Nanoscale. 2014;6(3):1264-70. doi: 10.1039/c3nr04533a.
We report the optoelectronic device properties of individual Au-silica hybrid nanowires prepared by microwave plasma enhanced chemical vapor deposition. Due to the surface plasmon resonance (SPR) effect the photo-responsivity peak strongly depends on the shape of the embedded gold nanostructures in the silica nanowire in which the shape can be modified by controlling the growth time of Au-silica nanowires. Finite difference time domain (FDTD) simulation shows that the electric field distribution profiles of Au-silica hybrid nanowires support the photo-responsivity spectrum results. The photodetector performance of the Au-NPs@silica nanowire is investigated. The single Au-NPs@silica nanowire exhibits unique photo-responsivity in the visible range (500 nm), high selectivity, high photoconductive gain, and very fast rise (141 μs) and decay (298 μs) time constants. Furthermore, the mechanism for the high photoconductive gain is also discussed. This result implies that the Au-NPs@silica nanowire can be applied for future nanoscale optoelectronic devices.
我们报告了通过微波等离子体增强化学气相沉积法制备的单个 Au-二氧化硅杂化纳米线的光电设备性能。由于表面等离子体共振（SPR）效应，光响应峰值强烈依赖于嵌入在二氧化硅纳米线中的金纳米结构的形状，通过控制 Au-二氧化硅纳米线的生长时间可以改变这种形状。有限差分时域（FDTD）模拟表明，Au-二氧化硅杂化纳米线的电场分布轮廓支持光响应光谱结果。研究了 Au-NPs@二氧化硅纳米线的光电探测器性能。单个 Au-NPs@二氧化硅纳米线在可见光范围内（500nm）表现出独特的光响应、高选择性、高光导增益以及非常快的上升（141μs）和下降（298μs）时间常数。此外，还讨论了高光导增益的机制。这一结果表明，Au-NPs@二氧化硅纳米线可应用于未来的纳米光电设备。
