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金纳米等离子体介导的表面等离子体增强氮化镓纳米结构紫外光探测器

Au-Nanoplasmonics-Mediated Surface Plasmon-Enhanced GaN Nanostructured UV Photodetectors.

作者信息

Goswami Lalit, Aggarwal Neha, Krishna Shibin, Singh Manjri, Vashishtha Pargam, Singh Surinder Pal, Husale Sudhir, Pandey Rajeshwari, Gupta Govind

机构信息

Department of Electronics and Communication Engineering, Delhi Technological University, New Delhi 110042, India.

CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India.

出版信息

ACS Omega. 2020 Jun 12;5(24):14535-14542. doi: 10.1021/acsomega.0c01239. eCollection 2020 Jun 23.

Abstract

The nanoplasmonic impact of chemically synthesized Au nanoparticles (Au NPs) on the performance of GaN nanostructure-based ultraviolet (UV) photodetectors is analyzed. The devices with uniformly distributed Au NPs on GaN nanostructures (nanoislands and nanoflowers) prominently respond toward UV illumination (325 nm) in both self-powered as well as photoconductive modes of operation and have shown fast and stable time-correlated response with significant enhancement in the performance parameters. A comprehensive analysis of the device design, laser power, and bias-dependent responsivity and response time is presented. The fabricated Au NP/GaN nanoflower-based device yields the highest photoresponsivity of ∼ 380 mA/W, detectivity of ∼ 10 jones, reduced noise equivalent power of ∼ 5.5 × 10 W Hz, quantum efficiency of ∼ 145%, and fast response/recovery time of ∼40 ms. The report illustrates the mechanism where light interacts with the chemically synthesized nanoparticles guided by the surface plasmon to effectively enhance the device performance. It is observed that the Au NP-stimulated local surface plasmon resonance effect and reduced channel resistance contribute to the augmented performance of the devices. Further, the decoration of low-dimensional Au NPs on GaN nanostructures acts as a detection enhancer with a fast recovery time and paves the way toward the realization of energy-efficient optoelectronic device applications.

摘要

分析了化学合成的金纳米颗粒(Au NPs)对基于氮化镓(GaN)纳米结构的紫外(UV)光电探测器性能的纳米等离子体影响。在氮化镓纳米结构(纳米岛和纳米花)上均匀分布金纳米颗粒的器件,在自供电以及光电导操作模式下,对紫外光照射(325 nm)均有显著响应,并表现出快速且稳定的时间相关响应,性能参数有显著提高。本文对器件设计、激光功率以及偏置依赖的响应度和响应时间进行了全面分析。所制备的基于金纳米颗粒/氮化镓纳米花的器件产生了约380 mA/W的最高光响应度、约10琼斯的探测率、约5.5×10 W Hz的降低的噪声等效功率、约145%的量子效率以及约40 ms的快速响应/恢复时间。该报告阐述了光与由表面等离子体引导的化学合成纳米颗粒相互作用以有效提高器件性能的机制。观察到金纳米颗粒激发的局部表面等离子体共振效应和降低的沟道电阻有助于提高器件的性能。此外,在氮化镓纳米结构上修饰低维金纳米颗粒可作为具有快速恢复时间的检测增强剂,并为实现节能型光电器件应用铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/149f/7315566/feff7a2290a0/ao0c01239_0001.jpg

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