单晶碲化镉纳米线场效应晶体管作为基于纳米线的光电探测器。

Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector.

作者信息

Shaygan Mehrdad, Davami Keivan, Kheirabi Nazli, Baek Changi Ki, Cuniberti Gianaurelio, Meyyappan M, Lee Jeong-Soo

机构信息

Department of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea.

出版信息

Phys Chem Chem Phys. 2014 Nov 7;16(41):22687-93. doi: 10.1039/c4cp03322a.

DOI:10.1039/c4cp03322a

PMID:25230829

Abstract

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (∼2.5 × 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.

摘要

系统研究了基于碲化镉纳米线的场效应晶体管的电学和光电导特性。单个碲化镉纳米线场效应晶体管的电学特性验证了其p型行为。碲化镉纳米线场效应晶体管对可见近红外（400 - 800 nm）入射光具有快速、可逆且稳定的响应，其特点是具有高响应度（81 A W⁻¹）、光电导增益（约2.5×10⁴%）以及合理的响应和衰减时间（分别为0.7 s和1 s）。这些结果证实了基于碲化镉纳米线的光电探测器在光电子应用中的潜力。