Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489, Berlin, Germany.
Adv Mater. 2014 Feb 12;26(6):925-30. doi: 10.1002/adma.201303467. Epub 2013 Dec 12.
Band-bending in organic semiconductors, occurring at metal/alkali-halide cathodes in organic-electronic devices, is experimentally revealed and electrostatically modeled. Metal-to-organic charge transfer through the insulator, rather than doping of the organic by alkali-metal ions, is identified as the origin of the observed band-bending, which is in contrast to the localized interface dipole occurring without the insulating buffer layer.
有机半导体中的能带弯曲，发生在有机电子器件中金属/碱卤阴极处，已被实验揭示并通过静电学模型进行了模拟。通过绝缘体的金属到有机电荷转移，而不是碱金属离子对有机的掺杂，被确定为观察到的能带弯曲的起源，这与没有绝缘缓冲层时发生的局部界面偶极子相反。
