在各种电介质衬底上直接进行近平衡化学气相沉积高质量单晶石墨烯。
Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.
机构信息
Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
出版信息
Adv Mater. 2014 Mar 5;26(9):1348-53. doi: 10.1002/adma.201304872. Epub 2013 Dec 12.
PMID:24338972
Abstract
By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.
摘要
采用近平衡化学气相沉积法，证明高质量的单晶石墨烯可以在介电衬底上生长。最大尺寸约为 11μm。载流子迁移率可达约 5650cm(2)V(-1)s(-1)，与一些金属催化的石墨烯晶体相当，反映了石墨烯晶格的良好质量。
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