Electron-phonon interaction toward engineering carrier mobility of periodic edge structured graphene nanoribbons.

Graphene nanoribbons have many extraordinary electrical properties and are the candidates for semiconductor industry. In this research, we propose a design of Coved GNRs with periodic structure ranged from 4 to 8 nm or more, of which the size is within practical feature sizes by advanced lithography tools. The carrier transport properties of Coved GNRs with the periodic coved shape are designed to break the localized electronic state and reducing electron-phonon scattering. In this way, the mobility of Coved GNRs can be enhanced by orders compared with the zigzag GNRs in same width. Moreover, in contrast to occasional zero bandgap transition of armchair and zigzag GNRs without precision control in atomic level, the Coved GNRs with periodic edge structures can exclude the zero bandgap conditions, which makes practical the mass production process. The designed Coved-GNRs is fabricated over the Germanium (110) substrate where the graphene can be prepared in the single-crystalline and single-oriented formants and the edge of GNRs is later repaired under "balanced condition growth" and we demonstrate that the propose coved structures are compatible to current fabrication facility.