Hu Liangchen, Deng Jun, Xie Yiyang, Qian Fengsong, Dong Yibo, Xu Chen
Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China.
Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China.
Nanomaterials (Basel). 2023 Apr 12;13(8):1339. doi: 10.3390/nano13081339.
Graphene is an ideal material for flexible optoelectronic devices due to its excellent electrical and optical properties. However, the extremely high growth temperature of graphene has greatly limited the direct fabrication of graphene-based devices on flexible substrates. Here, we have realized in situ growth of graphene on a flexible polyimide substrate. Based on the multi-temperature-zone chemical vapor deposition cooperated with bonding a Cu-foil catalyst onto the substrate, the growth temperature of graphene was controlled at only 300 °C, enabling the structural stability of polyimide during growth. Thus, large-area high-quality monolayer graphene film was successfully in situ grown on polyimide. Furthermore, a PbS-graphene flexible photodetector was fabricated using the graphene. The responsivity of the device reached 10 A/W with 792 nm laser illumination. The in-situ growth ensures good contact between graphene and substrate; therefore, the device performance can remain stable after multiple bending. Our results provide a highly reliable and mass-producible path for graphene-based flexible devices.
由于其优异的电学和光学性能，石墨烯是柔性光电器件的理想材料。然而，石墨烯极高的生长温度极大地限制了在柔性衬底上直接制造基于石墨烯的器件。在此，我们实现了在柔性聚酰亚胺衬底上原位生长石墨烯。基于与将铜箔催化剂键合到衬底上相结合的多温区化学气相沉积，石墨烯的生长温度仅控制在300℃，从而在生长过程中实现了聚酰亚胺的结构稳定性。因此，大面积高质量的单层石墨烯薄膜成功地在聚酰亚胺上原位生长。此外，利用该石墨烯制备了硫化铅-石墨烯柔性光电探测器。在792nm激光照射下，该器件的响应度达到10A/W。原位生长确保了石墨烯与衬底之间的良好接触；因此，该器件在多次弯曲后性能仍能保持稳定。我们的结果为基于石墨烯的柔性器件提供了一条高度可靠且可大规模生产的途径。
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