Wang Chengyuan, Wang Jiangxin, Li Pei-Zhou, Gao Junkuo, Tan Si Yu, Xiong Wei-Wei, Hu Benlin, Lee Pooi See, Zhao Yanli, Zhang Qichun
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081.
Chem Asian J. 2014 Mar;9(3):779-83. doi: 10.1002/asia.201301547. Epub 2014 Jan 2.
N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.
N-取代的杂蒽已被广泛用作有机电子器件中的电活性层，而其中只有少数在有机电阻式存储器件中得到研究。在此，设计、合成并表征了一种新型的N-取代杂蒽2-(4'-(二苯胺基)苯基)-4,11-双((三异丙基甲硅烷基)乙炔基)-1H-咪唑并[4,5-b]吩嗪(DBIP)。基于DBIP的三明治结构存储器件已被制备出来，且这些器件表现出非易失性和稳定的存储特性以及良好的耐久性。
