Zhang Zepu, Nie Yijie, Hua Weiwei, Xu Jingxuan, Ban Chaoyi, Xiu Fei, Liu Juqing
Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China
RSC Adv. 2020 Jun 2;10(35):20900-20904. doi: 10.1039/d0ra02933e. eCollection 2020 May 27.
The facile synthesis of large-area coordination polymer membranes with controlled nanoscale thicknesses is critical towards their applications in information storage electronics. Here, we have reported a facile and substrate-independent interfacial synthesis method for preparing a large-area two-dimensional (2D) coordination polymer membrane at the air-liquid interface. The prepared high-quality 2D membrane could be transferred onto an indium tin oxide (ITO) substrate to construct a nonvolatile memory device, which showed reversible switching with a high ON/OFF current ratio of 10, good stability and a long retention time. Our discovery of resistive switching with nonvolatile bistability based on the substrate-independent growth of the 2D coordination polymer membrane holds significant promise for the development of solution-processable nonvolatile memory devices with a miniaturized device size.
大面积可控纳米级厚度的配位聚合物膜的简便合成对于其在信息存储电子学中的应用至关重要。在此，我们报道了一种简便且与基底无关的界面合成方法，用于在气液界面制备大面积二维（2D）配位聚合物膜。所制备的高质量2D膜可转移到氧化铟锡（ITO）基底上以构建非易失性存储器件，该器件显示出具有10的高开/关电流比的可逆开关特性、良好的稳定性和长保持时间。我们基于2D配位聚合物膜的与基底无关的生长发现具有非易失性双稳态的电阻开关，这对于开发具有小型化器件尺寸的溶液可加工非易失性存储器件具有重要前景。
