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氘代对导电聚合物光电性能的同位素效应。

The isotopic effects of deuteration on optoelectronic properties of conducting polymers.

机构信息

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.

1] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.

出版信息

Nat Commun. 2014;5:3180. doi: 10.1038/ncomms4180.

Abstract

The attractive optoelectronic properties of conducting polymers depend sensitively upon intra- and inter-polymer chain interactions, and therefore new methods to manipulate these interactions are continually being pursued. Here, we report a study of the isotopic effects of deuterium substitution on the structure, morphology and optoelectronic properties of regioregular poly(3-hexylthiophene)s with an approach that combines the synthesis of deuterated materials, optoelectronic properties measurements, theoretical simulation and neutron scattering. Selective substitutions of deuterium on the backbone or side-chains of poly(3-hexylthiophene)s result in distinct optoelectronic responses in poly(3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) photovoltaics. Specifically, the weak non-covalent intermolecular interactions induced by the main-chain deuteration are shown to change the film crystallinity and morphology of the active layer, consequently reducing the short-circuit current. However, side-chain deuteration does not significantly modify the film morphology but causes a decreased electronic coupling, the formation of a charge transfer state, and increased electron-phonon coupling, leading to a remarkable reduction in the open circuit voltage.

摘要

导电聚合物的吸引人的光电性能敏感地取决于聚合物链内和链间的相互作用,因此,不断寻求新的方法来操纵这些相互作用。在这里,我们报告了一种通过结合氘代材料的合成、光电性质测量、理论模拟和中子散射来研究氘取代对具有规整形貌的聚(3-己基噻吩)的结构、形态和光电性质的同位素效应的研究。聚(3-己基噻吩)主链或侧链上的选择性氘取代导致聚(3-己基噻吩)/[6,6]-苯基-C61-丁酸甲酯(PCBM)光伏器件中的光电响应明显不同。具体而言,主链氘取代诱导的弱非共价分子间相互作用被证明会改变活性层的薄膜结晶度和形态,从而降低短路电流。然而,侧链氘取代不会显著改变薄膜形态,但会导致电子耦合减小、形成电荷转移态以及电子-声子耦合增加,导致开路电压显著降低。

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