Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
Nano Lett. 2014 Feb 12;14(2):464-72. doi: 10.1021/nl4033704. Epub 2014 Jan 29.
The thinnest semiconductor, molybdenum disulfide (MoS2) monolayer, exhibits promising prospects in the applications of optoelectronics and valleytronics. A uniform and highly crystalline MoS2 monolayer in a large area is highly desirable for both fundamental studies and substantial applications. Here, utilizing various aromatic molecules as seeding promoters, a large-area, highly crystalline, and uniform MoS2 monolayer was achieved with chemical vapor deposition (CVD) at a relatively low growth temperature (650 °C). The dependence of the growth results on the seed concentration and on the use of different seeding promoters is further investigated. It is also found that an optimized concentration of seed molecules is helpful for the nucleation of the MoS2. The newly identified seed molecules can be easily deposited on various substrates and allows the direct growth of monolayer MoS2 on Au, hexagonal boron nitride (h-BN), and graphene to achieve various hybrid structures.
最薄的半导体二硫化钼 (MoS2) 单层在光电子学和谷电子学的应用中具有广阔的前景。大面积、高结晶度和均匀的 MoS2 单层对于基础研究和实际应用都非常重要。在这里，我们利用各种芳香族分子作为成核促进剂，通过化学气相沉积 (CVD) 在相对较低的生长温度 (650°C) 下实现了大面积、高结晶度和均匀的 MoS2 单层。进一步研究了种子浓度和不同成核促进剂对生长结果的影响。我们还发现，优化的种子分子浓度有助于 MoS2 的成核。新发现的种子分子可以很容易地沉积在各种衬底上，并允许在金、六方氮化硼 (h-BN) 和石墨烯上直接生长单层 MoS2，从而实现各种杂化结构。
