Department of Electrical and Computer Engineering, ‡Department of Materials Science and NanoEngineering, and §Department of Physics and Astronomy, Rice University , Houston, Texas 77005, United States.
Nano Lett. 2014 Mar 12;14(3):1242-8. doi: 10.1021/nl4041274. Epub 2014 Feb 10.
Gate-controllable transmission of terahertz (THz) radiation makes graphene a promising material for making high-speed THz wave modulators. However, to date, graphene-based THz modulators have exhibited only small on/off ratios due to small THz absorption in single-layer graphene. Here we demonstrate a ∼50% amplitude modulation of THz waves with gated single-layer graphene by the use of extraordinary transmission through metallic ring apertures placed right above the graphene layer. The extraordinary transmission induced ∼7 times near-filed enhancement of THz absorption in graphene. These results promise complementary metal-oxide-semiconductor compatible THz modulators with tailored operation frequencies, large on/off ratios, and high speeds, ideal for applications in THz communications, imaging, and sensing.
门控太赫兹（THz）辐射传输使石墨烯成为制造高速太赫兹波调制器的有前途的材料。然而，迄今为止，由于单层石墨烯中太赫兹吸收率较小，基于石墨烯的太赫兹调制器的开/关比仅显示出较小的值。在这里，我们通过使用放置在石墨烯层上方的金属环孔的非凡传输，演示了对太赫兹波的约 50％幅度调制。非凡的传输在石墨烯中引起了太赫兹吸收的近场增强约 7 倍。这些结果有望实现与互补金属氧化物半导体兼容的太赫兹调制器，其具有可调节的工作频率、大的开/关比和高速，非常适合太赫兹通信、成像和传感应用。
