无序石墨烯纳米带中的电子穿越时间

Electron Traversal Times in Disordered Graphene Nanoribbons.

作者信息

Ridley Michael, Sentef Michael A, Tuovinen Riku

机构信息

The Raymond and Beverley Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel.

Max Planck Institute for the Structure and Dynamics of Matter, 22761 Hamburg, Germany.

出版信息

Entropy (Basel). 2019 Jul 27;21(8):737. doi: 10.3390/e21080737.

DOI:10.3390/e21080737

PMID:33267451

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7515266/

Abstract

Using the partition-free time-dependent Landauer-Büttiker formalism for transient current correlations, we study the traversal times taken for electrons to cross graphene nanoribbon (GNR) molecular junctions. We demonstrate electron traversal signatures that vary with disorder and orientation of the GNR. These findings can be related to operational frequencies of GNR-based devices and their consequent rational design.

摘要

利用用于瞬态电流关联的无分区时间相关的朗道尔-比蒂克形式理论，我们研究了电子穿过石墨烯纳米带（GNR）分子结所需的穿越时间。我们展示了随GNR的无序度和取向而变化的电子穿越特征。这些发现可与基于GNR的器件的工作频率及其合理设计相关联。