Kim In Gyoo, Jang Ki-Seok, Joo Jiho, Kim Sanghoon, Kim Sanggi, Choi Kwang-Seong, Oh Jin Hyuk, Kim Sun Ae, Kim Gyungock
Opt Express. 2013 Dec 16;21(25):30718-25. doi: 10.1364/OE.21.030716.
We present high-sensitivity photoreceivers based on a vertical- illumination-type 100% Ge-on-Si p-i-n photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A butterfly-packaged photoreceiver using a Ge PD with 3-dB bandwidth (f(-3dB)) of 29 GHz demonstrates the sensitivities of -10.15 dBm for 40 Gb/s data rate and -9.47 dBm for 43 Gb/s data rate, at BER of 10(-12) and λ 1550 nm. Also a photoreceiver based on a Ge PD with f(-3dB)19 GHz shows -14.14 dBm sensitivity at 25 Gb/s operation. These results prove the high performance levels of vertical-illumination type Ge PDs ready for practical high-speed network applications.
我们展示了基于垂直照明型100%硅基锗p-i-n光电探测器（PD）的高灵敏度光接收器，其在高达50 Gb/s的速率下具有高响应度。一个采用3 dB带宽（f(-3dB)）为29 GHz的锗光电探测器的蝶形封装光接收器，在误码率为10(-12)且波长λ1550 nm时，对于40 Gb/s的数据速率显示出-10.15 dBm的灵敏度，对于43 Gb/s的数据速率显示出-9.47 dBm的灵敏度。此外，一个基于f(-3dB)19 GHz的锗光电探测器的光接收器在25 Gb/s的运行速率下显示出-14.14 dBm的灵敏度。这些结果证明了垂直照明型锗光电探测器的高性能水平，可用于实际的高速网络应用。
