Joo Jiho, Jang Ki-Seok, Kim Sang Hoon, Kim In Gyoo, Oh Jin Hyuk, Kim Sun Ae, Jeong Gyu-Seob, Kim Yoonsoo, Park Jun-Eun, Kim Sungwoo, Chi Hankyu, Jeong Deog-Kyoon, Kim Gyungock
Opt Express. 2015 May 4;23(9):12232-43. doi: 10.1364/OE.23.012232.
We present the hybrid-integrated silicon photonic receiver and transmitter based on silicon photonic devices and 65 nm bulk CMOS interface circuits operating over 30 Gb/s with a 10(-12) bit error rate (BER) for λ ~1550nm. The silicon photonic receiver, operating up to 36 Gb/s, is based on a vertical-illumination type Ge-on-Si photodetector (Ge PD) hybrid-integrated with a CMOS receiver front-end circuit (CMOS Rx IC), and exhibits high sensitivities of -11 dBm, -8 dBm, and -2 dBm for data rates of 25 Gb/s, 30 Gb/s and 36 Gb/s, respectively, at a BER of 10(-12). The measured energy efficiency of the Si-photonic receiver is 2.6 pJ/bit at 25 Gb/s with an optical input power of -11 dBm, and 2.1 pJ/bit at 36 Gb/s with an optical power of -2 dBm. The hybrid-integrated silicon photonic transmitter, comprised of a depletion-type Mach-Zehnder modulator (MZM) and a CMOS driver circuit (CMOS Tx IC), shows better than 5.7 dB extinction ratio (ER) for 25 Gb/s, and 3 dB ER for 36 Gb/s. The silicon photonic transmitter achieves the data transmission with less than 10(-15) BER at 25 Gb/s, 10(-14) BER at 28 Gb/s, and 6 x 10(-13) BER with the energy efficiency of ~6 pJ/bit at 30 Gb/s.
我们展示了一种基于硅光子器件和65纳米体CMOS接口电路的混合集成硅光子接收器和发射器，其在λ~1550nm波长下以10^(-12)的误码率（BER）运行速度超过30 Gb/s。硅光子接收器运行速度高达36 Gb/s，基于与CMOS接收器前端电路（CMOS Rx IC）混合集成的垂直照明型硅基锗光电探测器（Ge PD），在误码率为10^(-12)时，对于25 Gb/s、30 Gb/s和36 Gb/s的数据速率，分别表现出-11 dBm、-8 dBm和-2 dBm的高灵敏度。在25 Gb/s、光输入功率为-11 dBm时，硅光子接收器的测量能量效率为2.6 pJ/比特；在36 Gb/s、光功率为-2 dBm时，能量效率为2.1 pJ/比特。由耗尽型马赫-曾德尔调制器（MZM）和CMOS驱动电路（CMOS Tx IC）组成的混合集成硅光子发射器，对于25 Gb/s显示出优于5.7 dB的消光比（ER），对于36 Gb/s显示出3 dB的ER。硅光子发射器在25 Gb/s时实现了低于10^(-15)的误码率数据传输，在28 Gb/s时实现了10^(-14)的误码率，在30 Gb/s时实现了6×10^(-13)的误码率，能量效率约为6 pJ/比特。
