Oh Semi, Su Pei-Chen, Yoon Yong-Jin, Cho Soohaeng, Oh Joon-Ho, Seong Tae-Yeon, Kim Kyoung-Kook
Opt Express. 2013 Nov 4;21 Suppl 6:A970-6. doi: 10.1364/OE.21.00A970.
We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a pre-annealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration. This electrode significantly improves the optical output power of GaN-based LEDs with an enhancement factor of 2.18 at 100 mA without degradation in electrical property when compared to a reference LED.
我们提出了一种双层透明氧化铟锡（ITO）顶部电极方案，并展示了基于氮化镓（GaN）的发光二极管（LED）光输出功率的增强。所提出的双层结构由仅通过无掩膜湿法蚀刻工艺获得的具有随机分布的球状纳米图案的层和用于维持电极电流扩展的预退火底层组成。观察到表面形态和光电特性取决于蚀刻持续时间。与参考LED相比，该电极在100 mA时显著提高了基于GaN的LED的光输出功率，增强因子为2.18，且电性能无退化。
