Baek Kwang Sun, Sadasivam Karthikeyan Giri, Lee Young Gon, Song Young Ho, Jeong Tak, Kim Seung Hwan, Kim Jae Kwan, Kim Seung Hwan, Jeon Seong-Ran, Lee June Key
Interdisciplinary Program of Photonics Engineering, Chonnam National University, Gwangju 500-757, Korea.
J Nanosci Nanotechnol. 2011 Aug;11(8):7495-8. doi: 10.1166/jnn.2011.4816.
380 nm ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS) with silicon dioxide (SiO2) nano pattern to improve the light output efficiency. Wet etched self assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. Three different diameter of ITO such as 200, 250 and 300 nm were used for SiO2 nano pattern fabrication. PNS is obtained by n-GaN regrowth on SiO2 nano patterns and UV LEDs were grown on PNS template by MOCVD. Enhanced light output intensity was observed by employing SiO2 nano patterns on n-GaN. Among different PNS UV LEDs, LED grown on PNS with 300 nm ITO diameter showed enhancement in light output intensity by 2.1 times compared to the reference LED without PNS.
380纳米紫外（UV）发光二极管（LED）生长在带有二氧化硅（SiO2）纳米图案的图案化n型氮化镓衬底（PNS）上，以提高光输出效率。湿法蚀刻的自组装铟锡氧化物（ITO）纳米团簇用作干法蚀刻掩膜，通过电感耦合等离子体蚀刻将生长在n型氮化镓模板上的SiO2层转化为SiO2纳米图案。三种不同直径（200、250和300纳米）的ITO用于SiO2纳米图案制造。PNS通过在SiO2纳米图案上进行n型氮化镓再生长获得，UV LED通过金属有机化学气相沉积（MOCVD）生长在PNS模板上。通过在n型氮化镓上采用SiO2纳米图案，观察到光输出强度增强。在不同的PNS UV LED中，在直径为300纳米ITO的PNS上生长的LED与没有PNS的参考LED相比，光输出强度增强了2.1倍。
