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通过渐变AlGaN电子阻挡层改善InGaN/GaN发光二极管中的空穴注入和电子溢出

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

作者信息

Lin Bing-Chen, Chen Kuo-Ju, Wang Chao-Hsun, Chiu Ching-Hsueh, Lan Yu-Pin, Lin Chien-Chung, Lee Po-Tsung, Shih Min-Hsiung, Kuo Yen-Kuang, Kuo Hao-Chung

出版信息

Opt Express. 2014 Jan 13;22(1):463-9. doi: 10.1364/OE.22.000463.

DOI:10.1364/OE.22.000463
PMID:24515006
Abstract

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

摘要

对具有阶梯渐变铝成分的锥形AlGaN电子阻挡层在基于氮化物的蓝光发光二极管（LED）中进行了数值和实验分析。研究了能带图、静电场、载流子浓度、电子电流密度分布和空穴传输概率。模拟结果表明，这种锥形结构可以有效地提高空穴注入效率以及电子限制。因此，通过金属有机化学气相沉积生长的具有锥形电子阻挡层的LED表现出29%的效率下降行为，而原始LED为44%，这反映了我们设计中空穴注入和电子溢出的改善。

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