Lim Seungyoung, Kim Tae-Soo, Kang Jaesang, Kim Jaesun, Song Minhyup, Kim Hyun Deok, Song Jung-Hoon
Photonic/Wireless Devices Research Division, Electronics and Telecommunication Research Institute, Daejeon 34129, Korea.
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
Micromachines (Basel). 2022 Jul 31;13(8):1233. doi: 10.3390/mi13081233.
The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy. We observed anomalous photocurrent reversal and its temporal recovery in AlGaN-based DUV LEDs as the wavelength of illuminating light varied from DUV to visible. The wavelength-dependent photocurrent measurements were performed on 265 nm-emitting DUV LEDs under zero-bias conditions. Sharp near-band-edge (265 nm) absorption was observed in addition to broad (300-800 nm) visible-range absorption peaks in the photocurrent spectrum, while the current direction of these two peaks were opposite to each other. In addition, the current direction of the photocurrent in the visible wavelength range was reversed when a certain forward bias was applied. This bias-induced current reversal displayed a slow recovery time (6 h) when the applied forward voltage was removed. Furthermore, the recovery time showed strong temperature dependency and was faster as the sample temperature increased. This result can be consistently explained by the presence of hole traps at the electron-blocking layer and the band bending caused by piezoelectric polarization fields. The activation energy of the defect state was calculated to be 279 meV using the temperature dependency of the recovery time.
