Povirk L F, Houlgrave C W
Department of Pharmacology and Toxicology, Medical College of Virginia, Virginia Commonwealth University, Richmond 23298.
Environ Mol Mutagen. 1988;11(4):461-72. doi: 10.1002/em.2850110407.
Previous DNA sequence analysis of bleomycin-induced forward mutations in repackaged lambda phage has suggested SOS-dependent replicative bypass of oxidized apyrimidinic sites as a possible mechanism of mutagenesis. In order to evaluate this hypothesis further, frequencies of mutation to a clear-plaque phenotype were compared for bleomycin-damaged phage grown in various repair-deficient strains of Escherichia coli. Survival of bleomycin-damaged phage was virtually identical in all host strains. Studies in SOS-deficient strains indicated specific requirements for functional recA+ and umuC+ alleles in the generation of the majority of bleomycin-induced mutations, as well as a less stringent requirement for induction of the SOS response by ultraviolet irradiation of the host cells. These results are expected for mutagenesis resulting from apyrimidinic sites. However, the mutation frequency for bleomycin-damaged phage was the same whether the phage were grown in a wild-type strain or in strains deficient in apurinic/apyrimidinic repair endonucleases; this was true even for an nth-nfo-xth- strain lacking all three major apurinic/apyrimidinic endonucleases (endonuclease III, endonuclease IV, and exonuclease III). Likewise, phage grown in an endonuclease IV-overproducing strain showed the same mutation frequency as those grown in wild-type cells. These data suggest that either i) bleomycin-induced mutagenesis results from SOS-dependent bypass of lesions other than apyrimidinic sites or ii) the number of apyrimidinic sites available for SOS processing is virtually independent of the level of apurinic/apyrimidinic endonuclease activity in the cell. It is possible that a fraction of the apyrimidinic sites induced by bleomycin either are intrinsically resistant to repair or undergo secondary reactions that render them resistant.
先前对博来霉素诱导的重包装λ噬菌体正向突变的DNA序列分析表明,氧化脱嘧啶位点的SOS依赖性复制性跨越是一种可能的诱变机制。为了进一步评估这一假设,比较了在各种大肠杆菌修复缺陷菌株中生长的博来霉素损伤噬菌体向清晰噬菌斑表型的突变频率。博来霉素损伤噬菌体在所有宿主菌株中的存活率几乎相同。在SOS缺陷菌株中的研究表明,大多数博来霉素诱导的突变产生需要功能性recA+和umuC+等位基因,并且宿主细胞紫外线照射诱导SOS反应的要求不太严格。这些结果与脱嘧啶位点引起的诱变预期一致。然而,无论噬菌体是在野生型菌株中生长还是在脱嘌呤/脱嘧啶修复内切酶缺陷的菌株中生长,博来霉素损伤噬菌体的突变频率都是相同的;即使是缺乏所有三种主要脱嘌呤/脱嘧啶内切酶(内切酶III、内切酶IV和外切酶III)的nth-nfo-xth-菌株也是如此。同样,在过量产生内切酶IV的菌株中生长的噬菌体与在野生型细胞中生长的噬菌体显示出相同的突变频率。这些数据表明,要么i)博来霉素诱导的诱变是由除脱嘧啶位点以外的损伤的SOS依赖性跨越引起的,要么ii)可用于SOS处理的脱嘧啶位点数量实际上与细胞中脱嘌呤/脱嘧啶内切酶活性水平无关。有可能博来霉素诱导的一部分脱嘧啶位点要么对修复具有内在抗性,要么经历使其具有抗性的二级反应。