Optoelectronics Research Centre, Tampere University of Technology, P,O, Box 692, Tampere FIN-33101, Finland.
Nanoscale Res Lett. 2014 Feb 17;9(1):80. doi: 10.1186/1556-276X-9-80.
We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps.
78.47.D; 78.55.Cr; 88.40.hj.
我们报告了在 GaAs(100) 上生长的 GaInNAs 和 GaNAsSb p-i-n 体太阳能电池的时间分辨光致发光研究。特别是，我们研究了载流子寿命随 N 含量增加而降低的程度。快速热退火证明，对于 GaInNAs 和 GaNAsSb 异质结构，其衰减时间都显著增加了 10 到 12 倍，而对于在与 GaInNAs 相同生长条件下生长的 1-eV 带隙 GaNAsSb 结构，在退火后其光致发光衰减时间仍略低于 100 ps；大约 1.15-eV 的 GaInNAs p-i-n 太阳能电池表现出长达 900 ps 的寿命。
78.47.D；78.55.Cr；88.40.hj。
