Braza V, Reyes D F, Gonzalo A, Utrilla A D, Ben T, Ulloa J M, González D
Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real, Cádiz, Spain.
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040, Madrid, Spain.
Nanoscale Res Lett. 2017 Dec;12(1):356. doi: 10.1186/s11671-017-2129-2. Epub 2017 May 18.
As promising candidates for solar cell and photodetection applications in the range 1.0-1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1-1.15-eV photonic applications.
作为有望用于1.0 - 1.16电子伏特范围内太阳能电池和光电探测应用的材料，对与砷化镓晶格匹配的稀氮化物砷化镓锑氮合金的生长进行了研究。出于这个目的，我们利用分子束外延反应器中的温度梯度，根据晶圆径向成分梯度分析温度对锑和氮物种掺入的影响。X射线衍射（XRD）和能量色散X射线光谱（EDS）相结合的结果表明，当我们远离晶圆中心时，氮和锑的掺入速率相反。观察到锑和氮在占据V族位置方面存在竞争行为，这取决于生长速率和衬底温度。在双带反交叉模型的框架内讨论了通过光致发光获得的光学性质。生长条件为氮的能级和耦合相互作用势定义了两组不同的参数，在寻找1 - 1.15电子伏特光子应用的最佳成分时必须考虑这些参数。
