Tan K H, Yoon S F, Loke W K, Wicaksono S, Ng T K, Lew K L, Stöhr A, Fedderwitz S, Weiss M, Jäger D, Saadsaoud N, Dogheche E, Decoster D, Chazelas J
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore.
Opt Express. 2008 May 26;16(11):7720-5. doi: 10.1364/oe.16.007720.
GaNAsSb/GaAs p-i-n photo notdetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350 degrees C, 400 degrees C, 440 degrees C and 480 degrees C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The i-GaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350 nm. The device with i-GaNAsSb layer grown at 350 degrees C exhibits extremely high photoresponsivity of 12A/W at 1.3 microm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.
采用射频氮等离子体辅助分子束外延技术结合带阀锑裂解源，制备了具有在350℃、400℃、440℃和480℃生长的本征GaNAsSb光吸收层的GaNAsSb/GaAs p-i-n光电探测器。本征GaNAsSb光吸收层含有3.3%的氮和8%的锑，产生了高达1350nm波长的直流光响应。在350℃生长本征GaNAsSb层的器件在1.3μm处表现出12A/W的极高光响应率。这些光电探测器的特性强烈表明在反向偏压小于5V时存在载流子雪崩过程。
