Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland.
Nanoscale Res Lett. 2014 Feb 17;9(1):81. doi: 10.1186/1556-276X-9-81.
Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that the annealing temperature has a strong influence on the PL decay time, and hence, it influences the optical quality of GaInNAsSb QWs. At low temperatures, the PL decay time exhibits energy dependence (i.e., the decay times change for different energies of emitted photons), which can be explained by the presence of localized states. This energy dependence of PL decay times was fitted by a phenomenological formula, and the average value of E0, which describes the energy distribution of localized states, was extracted from this fit and found to be smallest (E0 = 6 meV) for the QW annealed at 700°C. In addition, the value of PL decay time at the peak energy was compared for all samples. The longest PL decay time (600 ps) was observed for the sample annealed at 700°C. It means that based on the PL dynamics, the optimal annealing temperature for this QW is approximately 700°C.
时间分辨光致发光（PL）被应用于研究在近 1.3μm 处发射的 GaInNAsSb 量子阱（QW）中的载流子复合动力学，并在不同温度下进行了退火处理。结果表明，退火温度对 PL 衰减时间有很强的影响，从而影响 GaInNAsSb QW 的光学质量。在低温下，PL 衰减时间表现出能量依赖性（即，对于发射光子的不同能量，衰减时间会发生变化），这可以用局域态的存在来解释。通过经验公式对 PL 衰减时间的这种能量依赖性进行了拟合，并从该拟合中提取了描述局域态能量分布的平均 E0 值，发现 E0 值最小（E0=6meV）的是在 700°C 下退火的 QW。此外，还比较了所有样品在峰值能量处的 PL 衰减时间。在 700°C 退火的样品观察到最长的 PL 衰减时间（600ps）。这意味着基于 PL 动力学，该 QW 的最佳退火温度约为 700°C。
