Materials Science and Technology Division, Naval Research Laboratory, Washington, District of Columbia 20375, USA.
Electronics Science and Technology Division, Naval Research Laboratory, Washington, District of Columbia 20375, USA.
Nat Nanotechnol. 2014 Mar;9(3):218-24. doi: 10.1038/nnano.2014.16. Epub 2014 Feb 23.
Topological insulators exhibit metallic surface states populated by massless Dirac fermions with spin-momentum locking, where the carrier spin lies in-plane, locked at right angles to the carrier momentum. Here, we show that a charge current produces a net spin polarization via spin-momentum locking in Bi2Se3 films, and this polarization is directly manifested as a voltage on a ferromagnetic contact. This voltage is proportional to the projection of the spin polarization onto the contact magnetization, is determined by the direction and magnitude of the charge current, scales inversely with Bi2Se3 film thickness, and its sign is that expected from spin-momentum locking rather than Rashba effects. Similar data are obtained for two different ferromagnetic contacts, demonstrating that these behaviours are independent of the details of the ferromagnetic contact. These results demonstrate direct electrical access to the topological insulators' surface-state spin system and enable utilization of its remarkable properties for future technological applications.
拓扑绝缘体表现出金属表面态,其中载流子的自旋位于平面内,与载流子动量成直角锁定,由无质量狄拉克费米子组成。在这里,我们表明在 Bi2Se3 薄膜中,通过自旋-动量锁定,电荷电流会产生净自旋极化,并且这种极化直接表现为铁磁接触上的电压。该电压与自旋极化在接触磁化强度上的投影成正比,由电荷电流的方向和大小决定,与 Bi2Se3 薄膜厚度成反比,其符号是由自旋-动量锁定而不是 Rashba 效应决定的。对于两个不同的铁磁接触,得到了类似的数据,这表明这些行为独立于铁磁接触的细节。这些结果表明可以直接访问拓扑绝缘体表面态自旋系统,并为未来的技术应用利用其卓越的性能。