Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, D-12489 Berlin, Germany.
Phys Rev Lett. 2012 Jun 22;108(25):256810. doi: 10.1103/PhysRevLett.108.256810.
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi(2)Se(3) by means of core-level and angle-resolved photoelectron spectroscopy. The topological surface state reveals surface electron doping when the Fe is deposited at room temperature and hole doping with increased linearity when deposited at low temperature (~8 K). We show that in both cases the surface state remains intact and gapless, in contradiction to current belief. Our results suggest that the surface state can very well exist at functional interfaces with ferromagnets in future devices.
我们通过核心能级和角分辨光电子能谱研究了 Fe 杂质在拓扑绝缘体 Bi(2)Se(3)表面的沉积作用。当 Fe 在室温下沉积时,拓扑表面态会显示出表面电子掺杂,而在低温(约 8 K)下沉积时则会显示出更线性的空穴掺杂。我们表明,在这两种情况下,表面态都保持完整且无能隙,这与当前的观点相矛盾。我们的结果表明,在未来的器件中,表面态可以很好地存在于与铁磁体的功能界面上。