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硬 X 射线纳米束直接诱导 Bi-2212 超导体中的掺杂变化。

Doping change in the Bi-2212 superconductor directly induced by a hard X-ray nanobeam.

机构信息

Department of Physics, Interdepartmental Centre NIS, University of Torino , via Giuria 1, I-10125 Torino, Italy.

出版信息

Nano Lett. 2014 Mar 12;14(3):1583-9. doi: 10.1021/nl404834u. Epub 2014 Mar 3.

DOI:10.1021/nl404834u
PMID:24568635
Abstract

We describe the controlled use of a 17 keV X-ray synchrotron nanobeam to progressively change the oxygen doping level in Bi-2212 superconducting whisker-like single crystals. Our data combine structural and electrical information collected on the same crystals, showing a maximum change in the critical temperature Tc of 1.3 K and a maximum elongation of ∼1 Å in the c-axis length, compared to the as-grown conditions. Simulations of our experimental conditions by means of a finite element model exclude local heating induced by the X-ray nanobeam as a possible cause for the change in the doping level and suggest an important role of secondary electrons. These findings support the possible use of hard X-rays as a novel direct-writing, photoresist-free lithographic process for the fabrication of superconducting devices, with potential nanometric resolution and 3D capability.

摘要

我们描述了对 17keV X 射线同步加速器纳米束的控制使用,以逐步改变 Bi-2212 超导晶须状单晶中的氧掺杂水平。我们的数据结合了在同一晶体上收集的结构和电学信息,与原始生长条件相比,Tc 的临界温度最大变化为 1.3K,c 轴长度的最大伸长约为 1Å。通过有限元模型对我们的实验条件进行的模拟排除了 X 射线纳米束引起的局部加热作为掺杂水平变化的可能原因,并表明二次电子的重要作用。这些发现支持将硬 X 射线用作制造超导器件的新型无光刻胶直接写入光刻工艺,具有潜在的纳米级分辨率和 3D 能力。

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引用本文的文献

1
Maskless X-Ray Writing of Electrical Devices on a Superconducting Oxide with Nanometer Resolution and Online Process Monitoring.无掩模超导氧化物纳米分辨率 X 射线写入和在线过程监测的电学器件。
Sci Rep. 2017 Aug 22;7(1):9066. doi: 10.1038/s41598-017-09443-3.