Department of Chemistry and the New York State Center of Excellence in Materials Informatics, University at Buffalo, The State University of New York, Buffalo, NY 14260-3000, USA.
Phys Chem Chem Phys. 2014 Apr 14;16(14):6539-43. doi: 10.1039/c4cp00111g. Epub 2014 Feb 26.
We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm(-1) shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.
我们呈现了一项关于通过硫单层掺杂法掺杂的 In0.53Ga0.47As 外延层中电子-声子耦合的拉曼光谱研究。在 400 cm(-1) 以上检测到的高频耦合模式（HFCM）随载流子密度的增加而移动，并且可以提取激活掺杂剂浓度。
