O'Connell John, Napolitani Enrico, Impellizzeri Giuliana, Glynn Colm, McGlacken Gerard P, O'Dwyer Colm, Duffy Ray, Holmes Justin D
Department of Chemistry and Tyndall National Institute, University College Cork, Cork, Ireland.
AMBER@CRANN, Trinity College Dublin, Dublin 2, Ireland.
ACS Omega. 2017 May 1;2(5):1750-1759. doi: 10.1021/acsomega.7b00204. eCollection 2017 May 31.
The functionalization and subsequent monolayer doping of InGaAs substrates using a tin-containing molecule and a compound containing both silicon and sulfur was investigated. Epitaxial InGaAs layers were grown on semi-insulating InP wafers and functionalized with both sulfur and silicon using mercaptopropyltriethoxysilane and with tin using allyltributylstannane. The functionalized surfaces were characterized using X-ray photoelectron spectroscopy (XPS). The surfaces were capped and subjected to rapid thermal annealing to cause in-diffusion of dopant atoms. Dopant diffusion was monitored using secondary ion mass spectrometry. Raman scattering was utilized to nondestructively determine the presence of dopant atoms, prior to destructive analysis, by comparison to a blank undoped sample. Additionally, due to the As-dominant surface chemistry, the resistance of the functionalized surfaces to oxidation in ambient conditions over periods of 24 h and 1 week was elucidated using XPS by monitoring the As 3d core level for the presence of oxide components.
研究了使用含锡分子以及含硅和硫的化合物对铟镓砷（InGaAs）衬底进行功能化及随后的单层掺杂。在半绝缘磷化铟（InP）晶片上生长外延铟镓砷层，并使用巯基丙基三乙氧基硅烷使其同时被硫和硅功能化，使用烯丙基三丁基锡使其被锡功能化。使用X射线光电子能谱（XPS）对功能化表面进行表征。对表面进行覆盖并进行快速热退火以使掺杂原子向内扩散。使用二次离子质谱监测掺杂剂扩散。在进行破坏性分析之前，通过与空白未掺杂样品比较，利用拉曼散射无损确定掺杂原子的存在。此外，由于以砷为主导的表面化学性质，通过监测As 3d核心能级以确定氧化物成分的存在，使用XPS阐明了功能化表面在24小时和1周时间内于环境条件下的抗氧化性。
