Oliva-Leyva M, Naumis Gerardo G
Depto. de Física-Química, Instituto de Física, Universidad Nacional Autónoma de México (UNAM). Apartado Postal 20-364, 01000, México D.F., Mexico.
J Phys Condens Matter. 2014 Mar 26;26(12):125302. doi: 10.1088/0953-8984/26/12/125302. Epub 2014 Mar 6.
The density of states and the AC conductivity of graphene under uniform strain are calculated using a new Dirac Hamiltonian that takes into account the main three ingredients that change the electronic properties of strained graphene: the real displacement of the Fermi energy, the reciprocal lattice strain and the changes in the overlap of atomic orbitals. Our simple analytical expressions for the density of states and the AC conductivity generalize previous expressions for uniaxial strain. The results suggest a way to measure the Grüneisen parameter β that appears in any calculation of strained graphene, as well as the emergence of a sort of Hall effect due to shear strain.
利用一种新的狄拉克哈密顿量计算了均匀应变下石墨烯的态密度和交流电导率，该哈密顿量考虑了改变应变石墨烯电子性质的三个主要因素：费米能的实际位移、倒易晶格应变以及原子轨道重叠的变化。我们关于态密度和交流电导率的简单解析表达式推广了先前关于单轴应变的表达式。结果提出了一种测量在任何应变石墨烯计算中出现的格林艾森参数β的方法，以及由于剪切应变而出现的一种霍尔效应。
