State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing University of Technology, Nanjing 210009 (China), Fax: (+86) 25-8317-2256; College of Chemistry and Chemical Engineering, Nanjing University of Technology, Nanjing 210009 (China).
Chemistry. 2014 Apr 1;20(14):4055-63. doi: 10.1002/chem.201304720. Epub 2014 Feb 25.
A facile method for the large-scale synthesis of SnO2 nanocrystal/graphene composites by using coarse metallic Sn particles and cheap graphite oxide (GO) as raw materials is demonstrated. This method uses simple ball milling to realize a mechanochemical reaction between Sn particles and GO. After the reaction, the initial coarse Sn particles with sizes of 3-30 μm are converted to SnO2 nanocrystals (approximately 4 nm) while GO is reduced to graphene. Composite with different grinding times (1 h 20 min, 2 h 20 min or 8 h 20 min, abbreviated to 1, 2 or 8 h below) and raw material ratios (Sn:GO, 1:2, 1:1, 2:1, w/w) are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and transmission electron microscopy. The as-prepared SnO2 /graphene composite with a grinding time of 8 h and raw material ratio of 1:1 forms micrometer-sized architected chips composed of composite sheets, and demonstrates a high tap density of 1.53 g cm(-3). By using such composites as anode material for LIBs, a high specific capacity of 891 mA h g(-1) is achieved even after 50 cycles at 100 mA g(-1).
一种简便的方法，用于通过使用粗金属 Sn 颗粒和廉价的石墨氧化物 (GO) 作为原料大规模合成 SnO2 纳米晶/石墨烯复合材料。该方法使用简单的球磨实现了 Sn 颗粒和 GO 之间的机械化学反应。反应后，初始粗 Sn 颗粒（尺寸为 3-30 μm）转化为 SnO2 纳米晶（约 4 nm），而 GO 则还原为石墨烯。通过 X 射线衍射、X 射线光电子能谱、场发射扫描电子显微镜和透射电子显微镜研究了不同研磨时间（1 h 20 min、2 h 20 min 或 8 h 20 min，简称 1、2 或 8 h 以下）和原料比（Sn:GO，1:2、1:1、2:1，w/w）的复合材料。研磨时间为 8 h、原料比为 1:1 的 SnO2 /石墨烯复合材料形成由复合片组成的微米级结构芯片，具有高振实密度为 1.53 g·cm-3。将这种复合材料用作 LIB 的阳极材料，即使在 100 mA·g-1 的电流密度下循环 50 次，仍可获得 891 mA·h·g-1 的高比容量。
