Han Jaehyun, Lee Jun-Young, Kwon Heemin, Yeo Jong-Souk
School of Integrated Technology, Yonsei University, Songdo-dong, Yeonsu-gu, Incheon 406-840, Korea. Yonsei Institute of Convergence Technology, Yonsei University, Songdo-dong, Yeonsu-gu, Incheon 406-840, Korea.
Nanotechnology. 2014 Apr 11;25(14):145604. doi: 10.1088/0957-4484/25/14/145604. Epub 2014 Mar 14.
Hexagonal boron nitride (h-BN) has gained great attention as a two-dimensional material, along with graphene. In this work, high-quality h-BN monolayers were grown in wafer scale (7 × 7 cm(2)) on Cu substrates by using low-pressure chemical vapor deposition (LPCVD). We created h-BN monolayers that were free of polymeric aminoborane (BH2NH2) nanoparticles, which are undesirable by-products of the ammonia borane precursor, by employing a simple filtering system in the CVD process. The optical band gap of 6.06 eV and sharp and symmetric Raman peak measured at 1371 cm(-1) indicate the synthesis of monolayer h-BN. In addition, spherical aberration (CS)-corrected high-resolution transmission electron microscopic images confirm the production of a single-layer hexagonal array of boron and nitrogen atoms.
六方氮化硼（h-BN）作为一种二维材料，与石墨烯一样受到了广泛关注。在这项工作中，通过低压化学气相沉积（LPCVD）在铜衬底上以晶圆规模（7×7 cm²）生长出了高质量的h-BN单层。我们通过在化学气相沉积过程中采用简单的过滤系统，制备出了不含聚合氨基硼烷（BH2NH2）纳米颗粒的h-BN单层，聚合氨基硼烷是硼烷氨前驱体产生的不良副产物。测得的6.06 eV光学带隙以及在1371 cm⁻¹处尖锐且对称的拉曼峰表明合成出了单层h-BN。此外，球差（CS）校正的高分辨率透射电子显微镜图像证实了硼和氮原子单层六边形阵列的生成。
