Ji Jongho, Kwak Hoe-Min, Yu Jimyeong, Park Sangwoo, Park Jeong-Hwan, Kim Hyunsoo, Kim Seokgi, Kim Sungkyu, Lee Dong-Seon, Kum Hyun S
Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea.
School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea.
Nano Converg. 2023 Apr 28;10(1):19. doi: 10.1186/s40580-023-00368-4.
Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.
远程外延于2017年被发现并报道，近年来受到了广泛关注。尽管这项技术最初似乎很难被其他实验室复制，但远程外延已经取得了长足的进展，许多研究小组能够使用包括III-V族、III-N族、宽带隙半导体、复合氧化物，甚至像锗这样的元素半导体在内的多种材料系统持续重现实验结果。与任何新兴技术一样，为了使新技术得到广泛应用，必须仔细研究和理解一些关键参数。对于远程外延来说，关键参数包括：（1）二维（2D）材料的质量；（2）二维材料在衬底上的转移或生长；（3）外延生长方法和条件。在这篇综述中，我们将深入概述迄今为止报道的用于远程外延的不同类型二维材料，以及二维材料生长和转移方法的重要性。然后，我们将介绍远程外延的各种生长方法，并强调每种生长方法在生长条件方面的要点，这些要点能够使在二维涂层单晶衬底上实现成功的外延生长。我们希望这篇综述能够聚焦于远程外延样品制备阶段以及生长过程中二维材料与衬底的相互作用，而这在迄今为止的任何其他综述中都未涉及。
