25 英寸六方 BN 单层薄膜的大卷生长，用于自释放 GaN 晶圆的缓冲层。

Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer.

机构信息

Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.

Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.

出版信息

Sci Rep. 2016 Oct 19;6:34766. doi: 10.1038/srep34766.

DOI:10.1038/srep34766

PMID:27756906

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5069463/

Abstract

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2" tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2" GaN or 4" Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 μm has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate.

摘要

六方氮化硼（h-BN）是一种具有较宽带隙（~6 eV）的有前途的二维材料。然而，h-BN 薄膜的生长尺寸受到反应室尺寸的强烈限制。在这里，我们通过低压化学气相沉积（LPCVD）方法，在缠绕的 Cu 箔上展示了单层和可控制的亚单层 h-BN 薄膜的大卷合成。通过将 Cu 箔基底缠绕成由多叉石英叉支撑的发条形状，可以通过将基底面积扩展到向内的连续二维卷曲来克服反应器尺寸的限制。在 1.2"管中实现了超过 25 英寸的超大尺寸单层 h-BN 薄膜。h-BN 单层的光学带隙被确定为 6.0 eV。h-BN 薄膜均匀地转移到 2" GaN 或 4" Si 晶片表面作为释放缓冲层。通过 HVPE 方法，可以实现超过 200 μm 的厚 GaN 晶片的无残余应变的外延生长，这可以提供高质量的同质外延衬底。