Senthilnathan Jaganathan, Liu Yung-Fang, Rao Kodepelly Sanjeeva, Yoshimura Masahiro
Promotion Centre for Global Materials Research (PCGMR), Department of Material Science and Engineering, National Cheng Kung University, Tainan, Taiwan.
Sci Rep. 2014 Mar 18;4:4395. doi: 10.1038/srep04395.
Formation of reduced and functionalized graphene oxide (r-FGO) at ambient temperature and pressure is demonstrated by generating liquid plasma submerged in acetonitrile and graphene oxide solution. The partial restoration of conjugation (sp(2) domain) and insertion of fluorophores such as nitrile and amine in r-FGO displays enhanced fluorescence property. Presence of nitrile and amine in r-FGO are confirmed by X-ray photoelectron spectroscopy and Fourier transforms infrared spectroscopy. Morphology and optical property of r-FGO are studied with transmission electron microscopy, scanning tunneling microscopy and Ultraviolet-visible spectroscopy measurements. The nitrile and amine present in r-FGO undergo a surface-controlled reversible redox reaction and sp(2)- enriched r-FGO acts as an electrical double layer, providing additional hybrid capacitance or pseudocapacitance. r-FGO shows high cyclic stability with a specific capacitance value of 349 F/g at the scan rate of 10 mV/s. Only marginal reduction of specific capacitance (<10% reduction) is observed at the end of 1000 cycles.
通过在浸没于乙腈和氧化石墨烯溶液中的液体等离子体来证明在室温和常压下还原和功能化氧化石墨烯（r-FGO）的形成。r-FGO中共轭（sp(2)域）的部分恢复以及诸如腈和胺等荧光团的插入显示出增强的荧光特性。通过X射线光电子能谱和傅里叶变换红外光谱确认了r-FGO中腈和胺的存在。利用透射电子显微镜、扫描隧道显微镜和紫外可见光谱测量研究了r-FGO的形态和光学性质。r-FGO中存在的腈和胺经历表面控制的可逆氧化还原反应，且富含sp(2)的r-FGO充当双电层，提供额外的混合电容或赝电容。r-FGO在10 mV/s的扫描速率下显示出高循环稳定性，比电容值为349 F/g。在1000次循环结束时仅观察到比电容的微小降低（降低<10%）。
