Institute for Nanoscale Technology, University of Technology Sydney, PO Box 123, Broadway NSW 2007, Australia.
Nanotechnology. 2014 Apr 18;25(15):155703. doi: 10.1088/0957-4484/25/15/155703. Epub 2014 Mar 20.
Triangular parallel-plate nanocapacitors were fabricated by a combination of microsphere lithography and physical vapor deposition. The devices were comprised of a 20 nm layer of dielectric material sandwiched between two 20 nm layers of gold. Dielectric materials with a range of relative permittivities were investigated. Charging of the capacitors was probed in a scanning electron microscope (SEM) by monitoring the change in brightness of the images of the devices as a function of time. The time constants, RC, associated with the charging of the capacitors, were extracted from the SEM grayscale data. The resulting average RC values were 248 ± 27 s for SiO2, 70 ± 8 s for Al2O3, 113 ± 80 s for ZnO and 125 ± 13 s for HfO2. These values are consistent with the anticipated RC values based on the resistivities and permittivities of the materials used in the devices and importantly, were measured without the need to attach any wires or leads.
采用微球光刻和物理气相沉积相结合的方法制备了三角形平行板纳米电容器。该器件由夹在两层 20nm 厚金层之间的 20nm 厚介电层组成。研究了具有不同介电常数的介电材料。通过监测器件图像的亮度随时间的变化，在扫描电子显微镜 (SEM) 中探测电容器的充电情况。从 SEM 灰度数据中提取与电容器充电相关的时间常数 RC。得到的平均 RC 值分别为：SiO2 为 248 ± 27s，Al2O3 为 70 ± 8s，ZnO 为 113 ± 80s，HfO2 为 125 ± 13s。这些值与基于器件中使用的材料的电阻率和介电常数预期的 RC 值一致，并且重要的是，无需连接任何电线或引线即可进行测量。
