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基于超纳米晶金刚石的低损耗横向延伸型压电滤波器

Low-loss lateral-extensional piezoelectric filters on ultrananocrystalline diamond.

作者信息

Fatemi Hediyeh, Abdolvand Reza

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2013 Sep;60(9):1978-88. doi: 10.1109/TUFFC.2013.2783.

Abstract

In this work, lateral-extensional thin-film piezoelectric- on-diamond (TPoD) filters with very low insertion loss (IL) values (<4 dB) are reported. Two different lateral-extensional modes of a resonant structure are coupled together to realize a two-pole filter. The filters of this work exhibit low IL values, with fractional bandwidth between 0.08% and 0.2%, and have a very small footprint. This paper reports on the lowest IL in the literature for lateral-extensional thin-film piezoelectric filters with 50 Ω terminations in the GSM frequency band (~900 MHz). The narrow-band filters of this work are fabricated on three ultrananocrystalline diamond substrates to achieve higher frequencies without excessive reduction in the feature size. The paper also thoroughly studies the parameters that affect the performance of such filters and then discussions are evaluated by the statistical data collected from the fabricated wafers.

摘要

在这项工作中,报道了具有极低插入损耗(IL)值(<4 dB)的横向延伸薄膜金刚石上压电(TPoD)滤波器。谐振结构的两种不同横向延伸模式耦合在一起以实现两极滤波器。这项工作中的滤波器呈现出低IL值,分数带宽在0.08%至0.2%之间,并且占用面积非常小。本文报道了在GSM频段(~900 MHz)中具有50 Ω终端的横向延伸薄膜压电滤波器在文献中最低的IL。这项工作中的窄带滤波器是在三个超纳米晶金刚石衬底上制造的,以在不过度减小特征尺寸的情况下实现更高频率。本文还深入研究了影响此类滤波器性能的参数,然后通过从制造的晶圆收集的统计数据对讨论进行了评估。

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