Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
Small. 2014 Jun 12;10(11):2300-6. doi: 10.1002/smll.201303670. Epub 2014 Mar 24.
A 2D atomic-layer-thickness phototransistor based on a graphene-MoS2 bybrid device is constructed with a photoresponse much larger than that of individual graphene or MoS2 based phototransistors. Strong and selective light absorption in the MoS2 layer creates electric charges that are transferred to graphene layers derived by a build-in electrical field, where they recirculate many times due to the high carrier mobility of graphene. Gate tunable Fermi level in graphene layer allows the responsivity of this hybrid phototransistor to be continuously tuned from 0 to about 10(4) mA/W by the gate voltage. Furthermore, large scale, flexible, and transparent 2D phototransistors with high responsivity are constructed from the CVD-grown graphene and MoS2 flakes. The high responsivity, gate-tunable sensitivity, wavelength selectivity, and compatibility with current circuit technologies of this type device give it great potential for future application in integrated nano-optoelectronic systems.
基于石墨烯-二硫化钼（MoS2）杂化器件的二维原子层厚光电晶体管，其光响应度远大于单个石墨烯或 MoS2 基光电晶体管。MoS2 层中的强且选择性的光吸收会产生电荷，这些电荷被内置电场转移到石墨烯层中，由于石墨烯的高载流子迁移率，它们会在其中多次循环。石墨烯层中的栅可调费米能级允许通过栅电压将这种杂化光电晶体管的响应度从 0 连续调谐到约 10(4) mA/W。此外，还从 CVD 生长的石墨烯和 MoS2 薄片构建了具有高响应度的大规模、柔性和透明的二维光电晶体管。该器件的高响应度、栅可调灵敏度、波长选择性以及与现有电路技术的兼容性，使其在集成纳光电系统中的未来应用具有巨大潜力。
