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晶粒内垂直渗透的L1₁ CoPt薄膜。

Intra-grain perpendicular percolated L1₁ CoPt thin films.

作者信息

Yuan Fu-Te, Sun An-Cheng, Huang C F, Hsu Jen-Hwa

机构信息

iSentek Ltd, Advanced Sensor Laboratory, New Taipei City 22101, Taiwan.

出版信息

Nanotechnology. 2014 Apr 25;25(16):165601. doi: 10.1088/0957-4484/25/16/165601. Epub 2014 Mar 26.

DOI:10.1088/0957-4484/25/16/165601
PMID:24670949
Abstract

Ultrathin percolated high-Ku magnetic films with thicknesses of 2 nm are realized simply by using sputter deposition and post annealing. L1₁ CoPt:MgO, with Ku on the order of 10(7) erg cm(-3), was deposited on a MgO(111) substrate at 350 °C, followed by post annealing to induce complete segregation of the added MgO dopants. The optimized film shows significant enhancement of the out-of-plane coercivity, approximately an order of magnitude greater than that of the CoPt binary film, a remanence ratio close to unity, considerably reduced in-plane magnetization, sharp perpendicular magnetic reversal, and reduced surface roughness in the range of a few angstroms. Microstructure results indicate that MgO precipitates into grains within the interconnected L1₁ grains after appropriate post annealing. The MgO grains, with sizes in the range 2-7 nm, form coherent interfaces to the CoPt matrix and penetrate through the whole depth of the film. The development of ideal non-magnetic domain wall pinning sites explains the optimization of the perpendicular magnetic properties. The advantages of a simple fabrication process, a thin film layer structure, and remarkable enhancement of the magnetic characteristics demanded by ultrahigh-density recording reveal its potential for practical applications.

摘要

通过溅射沉积和后退火,简单地实现了厚度为2纳米的超薄渗透高Ku磁性薄膜。在350°C下,将Ku约为10(7)尔格·厘米(-3)的L1₁ CoPt:MgO沉积在MgO(111)衬底上,随后进行后退火以诱导添加的MgO掺杂剂完全偏析。优化后的薄膜显示出显著增强的垂直矫顽力,比CoPt二元薄膜大约高一个数量级,剩磁比接近1,面内磁化强度显著降低,垂直磁反转尖锐,表面粗糙度降低到几埃的范围。微观结构结果表明,经过适当的后退火后,MgO在相互连接的L1₁晶粒内沉淀成晶粒。尺寸范围为2 - 7纳米的MgO晶粒与CoPt基体形成相干界面,并贯穿薄膜的整个深度。理想的非磁性畴壁钉扎位点的形成解释了垂直磁性能的优化。简单的制造工艺、薄膜层结构以及超高密度记录所需的磁特性的显著增强,揭示了其在实际应用中的潜力。

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