Houel Julien, Prechtel Jonathan H, Kuhlmann Andreas V, Brunner Daniel, Kuklewicz Christopher E, Gerardot Brian D, Stoltz Nick G, Petroff Pierre M, Warburton Richard J
Department of Physics, University of Basel, Klingelbergstrasse 82, CH 4056 Basel, Switzerland and Institut Lumière Matière (ILM), UMR5306 Université Lyon 1/CNRS, Université de Lyon, 69622 Villeurbanne Cedex, France.
Department of Physics, University of Basel, Klingelbergstrasse 82, CH 4056 Basel, Switzerland.
Phys Rev Lett. 2014 Mar 14;112(10):107401. doi: 10.1103/PhysRevLett.112.107401. Epub 2014 Mar 12.
We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physicslike dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify the cause of this process as charge noise by, first, demonstrating that the hole spin g factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.
我们报道了在半导体量子点中单个空穴自旋上实现的高分辨率相干布居囚禁。标志着暗态形成的吸收凹陷呈现出仅10兆赫兹的类原子物理凹陷宽度。我们观察到吸收凹陷绝对频率的波动，这是非常缓慢的自旋退相的证据。我们首先通过证明这种配置（面内磁场）下的空穴自旋g因子强烈依赖于垂直电场，其次通过表征电荷噪声对光学跃迁频率的影响，确定了这一过程的起因是电荷噪声。一个重要的结论是，电荷噪声是一个重要的空穴自旋退相过程。
